Extreme Temperature Invariant Circuitry Through Adaptive DC Body Biasing

This paper reports of a method for design of Extreme Environment (EE) electronics using the MOSFET body bias as a temperature compensation method A Quadrature 435 MHz Voltage Controlled Oscillator (VCO) was used as the test element for design, modeling, and simulation. The VCO was simulated in an EE temperature environment between -250C to +200C and designed in the Honeywell 0.35 CMOS Partially Depleted Silicon On Insulator (PDSOI) technology. The VCO was optimized for EE by tuning the fourth device (body) terminal at selected devices. This paper also describes how a suitable Spice model was obtained. Additionally, low power techniques are discussed for EE. Adaptive body biasing is used for optimizing the leakage of EE and adaptive supply voltage scaling was investigated to reduce the overall power.